technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com n-channel j-fet depletion mode equivalent to mil-prf-19500/375 t4-lds-0005 rev. 2 (101425) page 1 of 4 devices levels 2n3821 2n3821ub mq = jan equivalent 2n3822 2n3822ub mx = jantx equivalent 2N3823 2N3823ub mv = jantxv equivalent absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol 2n3821, ub 2n3822, ub 2N3823, ub unit gate-source voltage v gsr 50 30 v drain-source voltage v ds 50 30 v drain-gate voltage v dg 50 30 v gate current i gf 10 ma power dissipation t a = +25c (1) p t 300 mw operating junction & storage temperature range t j , t stg -55 to + 200 c note: (1) derate linearly 1.7mw/c for t a > +25c. electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics gate-source breakdown voltage v ds = 0, i g = 1.0 a dc 2n3821 / ub 2n3822 / ub 2N3823 / ub v (br)gssr 50 50 30 vdc gate reverse current v ds = 0, v gs = 30v dc v ds = 0, v gs = 30v dc v ds = 0, v gs = 20v dc 2n3821 / ub 2n3822 / ub 2N3823 / ub i gssr 0.1 0.1 0.5 a zero-gate-voltag e drain current v gs = 0, v ds = 15v dc 2n3821 / ub 2n3822 / ub 2N3823 / ub i dss 0.5 2.0 4.0 2.5 10 20 ma gate-source voltage v ds = 15v dc, i d = 50 a dc v ds = 15v dc, i d = 200 a dc v ds = 15v dc, i d = 400 a dc 2n3821 / ub 2n3822 / ub 2N3823 / ub v gs 0.5 1.0 1.0 2.0 4.0 7.5 vdc gate-source cutoff voltage v ds = 15v dc, i d = 0.5 a dc 2n3821 / ub 2n3822 / ub 2N3823 / ub v gs(off) 4.0 6.0 8.0 vdc to-72 (to-206af) ub - package
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0005 rev. 2 (101425) page 2 of 4 dynamic characteristics parameters / test conditions symbol min. max. unit small-signal common source, short-circ uit forward transf er admittance v gs = 0, v ds = 15v dc, f = 1.0khz 2n3821 / ub 2n3822 / ub 2N3823 / ub |y fs | 1 1500 3000 3500 4500 6500 6500 s small-signal, common source, short-circuit output admittance v gs = 0, v ds = 15v dc, f = 1.0khz 2n3821 / ub 2n3822 / ub 2N3823 / ub |y os | 10 20 35 s small-signal, common-source short-circuit input capacitance v gs = 0v dc, v ds = 15v dc, 100khz f 1.0mhz c iss 6.0 pf small-signal, common-source reverse transfer capacitance v ds = 15v dc, v gs = 0, 100khz f 1.0mhz 2n3821 / ub 2n3822 / ub 2N3823 / ub c rss 3.0 3.0 2.0 pf small-signal, common-source, short-ci rcuit forward transfer admittance v gs = 0, v ds = 15v dc, f = 100mhz f = 100mhz f = 200mhz 2n3821 / ub 2n3822 / ub 2N3823 / ub |y fs | 3 1500 3000 3200 s small-signal, common-source short-circuit input conductance v gs = 0, v ds = 15v dc, f = 200mhz 2N3823 (only) g is 800 s small-signal, common-source short-circuit output conductance v gs = 0, v ds = 15v dc, f = 200mhz 2N3823 (only) g os 200 s common source spot noise figure v gs = 0, v ds = 15v dc, r g = 1m f = 10hz f = 1.0khz 2n382, 2n3822 / ub 2n3821, 2n3822, 2N3823 / ub nf 1 5.0 2.0 db common source spot noise figure v gs = 0, v ds = 15v dc, r g = 1k f = 105mhz 2N3823 / ub (only) nf 2 2.5 db
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0005 rev. 2 (101425) page 3 of 4 package dimensions note: * 1 dimensions are in inches. millimeters are given for general information only. 2 measured in the zone beyond .250 (6.35 mm) from the seating plane. 3 measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from the seating plane. 4 when measured in a gauging plane .054 +.001, -.000 (1.37 +.3, -.00 mm) before the seating plane of the transistor, maximum diameter leads shall be within .007 (.18 mm) of their true location relative to a maximum width tab. smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 5 the active elements are electrica lly insulated from the case. 6 all 4 leads. 7 lead 1 is the source, lead 2 is the drain, lead 3 is the gate, and lead 4 is the case. 8 symbol tl is measured from hd maximum. 9 in accordance with asme y14.5m , diameters are equivalent to x symbology. *figure 1 physical dimensions (similar to to-72) dimensions ltr inches millimeters notes min max min max cd .178 .195 4.52 4.95 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 l1 .050 1.27 l2 .250 6.35 lc .100 tp 2.54 tp ld .016 .021 0.41 0.53 2, 6 ll .500 .750 12.70 19.05 6 lu .016 .019 0.41 0.48 3, 6 q .040 1.02 r .007 0.18 tl .028 .048 0.71 1.22 8 tw .036 .046 0.91 1.17 45 tp
technical data sheet 6 lake street, lawrence, ma 01841 gort road business park, ennis, co. clare, ireland 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: http://www.microsemi.com t4-lds-0005 rev. 2 (101425) page 4 of 4 notes: 1. dimensions are in inches. * 2. millimeters are given for general information only. * 3. hatched areas on package denote metallized areas. * 4. lid material: kovar. * 5. pad 1 = drain, pad 2 = source, pad 3 = gate, pad 4 = shielding connected to the lid. * figure 2. physical dimensions, surface mount (2n3821ub, 2n3822ub, and 2N3823ub) . dimensions symbol inches millimeters note min max min max bh .046 .056 1.17 1.42 bl .115 .128 2.92 3.25 bw .085 .108 2.16 2.74 cl .128 3.25 cw .108 2.74 ll 1 .022 .038 0.56 0.96 ll 2 .017 .035 0.43 0.89 ls 1 .036 .040 0.91 1.02 ls 2 .071 .079 1.81 2.01 lw .016 .024 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559
|
